LM5111 Dual 5A Compound Gate DriverCapability
July 2004
LM5111
Dual 5A Compound Gate Driver
General Description
The LM5111 Dual Gate Driver replaces industry standard
gate drivers with improved peak output current and effi-
ciency. Each 鈥渃ompound鈥?output driver stage includes MOS
and bipolar transistors operating in parallel that together sink
more than 5A peak from capacitive loads. Combining the
unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Under-
voltage lockout protection is also provided. The drivers can
be operated in parallel with inputs and outputs connected to
double the drive current capability. This device is available in
the SOIC-8 package.
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Independent inputs (TTL compatible)
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Fast propagation times (25 ns typical)
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Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF
load)
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Available in dual non-inverting, dual inverting and
combination configurations
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Supply rail under-voltage lockout protection
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Pin compatible with industry standard gate drivers
Typical Applications
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Synchronous Rectifier Gate Drivers
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Switch-mode Power Supply Gate Driver
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Solenoid and Motor Drivers
Features
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Independently drives two N-Channel MOSFETs
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Compound CMOS and bipolar outputs reduce output
current variation
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5A sink/3A source current capability
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Two channels can be connected in parallel to double the
drive current
Package
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SOIC-8
Pin Configurations
20112301
SOIC-8
漏 2004 National Semiconductor Corporation
DS201123
www.national.com