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LM5110-3SDX Datasheet

  • LM5110-3SDX

  • Dual 5A Compound Gate Driver with Negative Output Voltage Ca...

  • 13頁

  • NSC

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LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability
October 2003
LM5110
Dual 5A Compound Gate Driver with Negative Output
Voltage Capability
General Description
The LM5110 Dual Gate Driver replaces industry standard
gate drivers with improved peak output current and effi-
ciency. Each 鈥渃ompound鈥?output driver stage includes MOS
and bipolar transistors operating in parallel that together sink
more than 5A peak from capacitive loads. Combining the
unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Sepa-
rate input and output ground pins provide Negative Drive
Capability allowing the user to drive MOSFET gates with
positive and negative VGS voltages. The gate driver control
inputs are referenced to a dedicated input ground (IN_REF).
The gate driver outputs swing from V
CC
to the output ground
V
EE
which can be negative with respect to IN_REF. The
ability to hold MOSFET gates off with a negative VGS volt-
age reduces losses when driving low threshold voltage
MOSFETs often used as synchronous rectifiers. When driv-
ing with conventional positive only gate voltage, the IN_REF
and V
EE
pins are connected together and referenced to a
common ground. Under-voltage lockout protection and a
shutdown input pin are also provided. The drivers can be
operated in parallel with inputs and outputs connected to
double the drive current capability. This device is available in
the SOIC-8 and the thermally-enhanced LLP-10 packages.
n
5A sink/3A source current capability
n
Two channels can be connected in parallel to double the
drive current
n
Independent inputs (TTL compatible)
n
Fast propagation times (25 ns typical)
n
Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF
load)
n
Dedicated input ground pin (IN_REF) for split supply or
single supply operation
n
Outputs swing from V
CC
to V
EE
which can be negative
relative to input ground
n
Available in dual non-inverting, dual inverting and
combination configurations
n
Shutdown input provides low power mode
n
Supply rail under-voltage lockout protection
n
Pin-out compatible with industry standard gate drivers
Typical Applications
n
n
n
n
Synchronous Rectifier Gate Drivers
Switch-mode Power Supply Gate Driver
Solenoid and Motor Drivers
Power Level Shifter
Features
n
Independently drives two N-Channel MOSFETs
n
Compound CMOS and bipolar outputs reduce output
current variation
Package
n
SOIC-8
n
LLP-10 (4 mm x 4 mm)
Ordering Information
Order Number
LM5110-1/2/3 M
LM5110-1/2/3 MX
LM5110-1/2/3 SD
LM5110-1/2/3 SDX
Package Type
SOIC-8
SOIC-8
LLP-10
LLP-10
NSC Package Drawing
M08A
M08A
SDC10A
SDC10A
Supplied As
Shipped in anti-static units
2500 shipped in Tape & Reel
1000 shipped in Tape & Reel
4500 shipped in Tape & Reel
漏 2003 National Semiconductor Corporation
DS200792
www.national.com

LM5110-3SDX 產(chǎn)品屬性

  • National Semiconductor (TI)

  • Low Side

  • 25 ns

  • 25 ns

  • 14 V

  • 3.5 V

  • 2 mA

  • + 125 C

  • SMD/SMT

  • LLP EP

  • Reel

  • Inverting, Non-Inverting

  • - 40 C

  • 2

  • 2

  • 5 A (Typ)

  • 4500

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