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LM5102SD Datasheet

  • LM5102SD

  • High Voltage Half-Bridge Gate Driver with Programmable Delay

  • 13頁

  • NSC

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LM5102 High Voltage Half-Bridge Gate Driver with Programmable Delay
January 2004
LM5102
High Voltage Half-Bridge Gate Driver with Programmable
Delay
General Description
The LM5102 High Voltage Gate Driver is designed to drive
both the high side and the low side N-Channel MOSFETs in
a synchronous buck or a half bridge configuration. The float-
ing high-side driver is capable of working with supply volt-
ages up to 100V. The outputs are independently controlled.
The rising edge of each output can be independently de-
layed with a programming resistor. An integrated high volt-
age diode is provided to charge the high side gate drive
bootstrap capacitor. A robust level shifter operates at high
speed while consuming low power and providing clean level
transitions from control logic to the high side gate driver.
Under-voltage lockout is provided on both the low side and
the high side power rails. This device is available in the
standard MSOP-10 pin and the LLP-10 pin packages.
n
n
n
n
n
n
Bootstrap supply voltage range up to 118V DC
Fast turn-off propagation delay (25 ns typical)
Drives 1000 pF loads with 15 ns rise and fall times
Supply rail under-voltage lockout
Low power consumption
Timer can be terminated midway through sequence
Typical Applications
n
n
n
n
n
Current Fed push-pull power converters
Half and Full Bridge power converters
Synchronous Buck converters
Two switch forward power converters
Forward with Active Clamp converters
Features
n
Drives both a high side and low side N-channel
MOSFET
n
Independently programmable high and low side rising
edge delay
Package
n
MSOP-10
n
LLP-10 (4 mm x 4 mm)
Simplified Block Diagram
20088902
FIGURE 1.
漏 2004 National Semiconductor Corporation
DS200889
www.national.com

LM5102SD 產(chǎn)品屬性

  • National Semiconductor (TI)

  • High and Low Side

  • 600 ns (Typ)

  • 600 ns (Typ)

  • 14 V

  • 9 V

  • 3 mA

  • + 125 C

  • SMD/SMT

  • LLP EP

  • Reel

  • Non-Inverting

  • 750 ns

  • - 40 C

  • 2

  • 2

  • 1.8 A (Typ)

  • 1000

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