LM113 LM313 Reference Diode
December 1994
LM113 LM313 Reference Diode
General Description
The LM113 LM313 are temperature compensated low volt-
age reference diodes They feature extremely-tight regula-
tion over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature
stability
The diodes are synthesized using transistors and resistors
in a monolithic integrated circuit As such they have the
same low noise and long term stability as modern IC op
amps Further output voltage of the reference depends only
on highly-predictable properties of components in the IC so
they can be manufactured and supplied to tight tolerances
Dynamic impedance of 0 3X from 500
mA
to 20 mA
Temperature stability typically 1% over
b
55 C to 125 C
range (LM113) 0 C to 70 C (LM313)
Y
Tight tolerance
g
5%
g
2% or
g
1%
The characteristics of this reference recommend it for use in
bias-regulation circuitry in low-voltage power supplies or in
battery powered equipment The fact that the breakdown
voltage is equal to a physical property of silicon the ener-
gy-band gap voltage makes it useful for many tempera-
ture-compensation and temperature-measurement func-
tions
Y
Y
Features
Y
Low breakdown voltage 1 220V
Schematic and Connection Diagrams
Metal Can Package
Order Number
LM113H LM113H 883
LM113-1H LM113-1H 883
LM113-2H LM113-2H 883
or LM313H
See NS Package Number H02A
TL H 5713 鈥?1
Typical Applications
Low Voltage Regulator
Level Detector for Photodiode
Solid tantalum
TL H 5713 鈥?2
C
1995 National Semiconductor Corporation
TL H 5713
RRD-B30M115 Printed in U S A
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