Ordering number : EN5823
CMOS IC
LC35256D-10, LC35256DM, DT-70/10
Dual Control Pins: OE and CE
256K (32768-word
脳
8-bit) SRAM
Overview
The LC35256D, LC35256DM, and LC35256DT are
32768-word
脳
8-bit asynchronous silicon gate CMOS
static RAMs. These devices use a 6-transistor full CMOS
memory cell, and feature low-voltage operation, low
current drain, and an ultralow standby current. They
provide two control signal inputs: an OE input for high-
speed access and a chip select (CE) input for device
selection and low power operating mode. This makes
these devices optimal for systems that require low power
or battery backup, and they allow memory to be expanded
easily. Their ultralow standby current allows capacitor-
based backup to be used as well. Since they support 3-V
operation, they are appropriate for use in portable systems
that operate from batteries.
Package Dimensions
unit: mm
3012A-DIP28
[LC35256D]
SANYO: DIP28
unit: mm
3187-SOP28D
[LC35256DM]
Features
鈥?Supply voltage range: 2.7 to 5.5 V
鈥?5-V operation:
5.0 V鹵10%
鈥?3-V operation:
2.7 to 3.6 V
鈥?Access times
鈥?5-V operation
LC35256DM, DT-70: 70 ns (max)
LC35256D, DM, DT-10: 100 ns (max)
鈥?3-V operation
LC35256DM, DT-70: 200 ns (max)
LC35256D, DM, DT-10: 500 ns (max)
鈥?Standby current
鈥?5-V operation: 1.0 碌A(chǔ) (Ta
鈮?/div>
60擄C),
5.0 碌A(chǔ) (Ta
鈮?/div>
85擄C)
鈥?3-V operation: 0.8 碌A(chǔ) (Ta
鈮?/div>
60擄C),
4.0 碌A(chǔ) (Ta
鈮?/div>
85擄C)
鈥?Operating temperature range: 鈥?0 to +85擄C
鈥?Data retention supply voltage: 2.0 to 5.5 V
鈥?All I/O levels
鈥?5-V operation: TTL compatible
鈥?3-V operation: V
CC
鈥?0.2 V/0.2 V
鈥?Shared I/O pins and 3-state outputs
鈥?No clock signal required.
鈥?Packages
鈥?28-pin DIP (600 mil) plastic package: LC35256D
鈥?28-pin SOP (450 mil) plastic package: LC35256DM
鈥?28-pin TSOP (8
脳
13.4 mm) plastic package:
LC35256DT
SANYO: SOP28D
unit: mm
3221-TSOP28(type-I)
[LC35256DT]
SANYO: TSOP28(type-I)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51398RM (OT) No. 5823-1/8
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