LESHAN RADIO COMPANY, LTD.
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switch-
ing applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
鈥?Extremely Fast Switching Speed
鈥?Low Forward Voltage 鈥?0.35 Volts (Typ) @ I
F
= 10 mAdc
ANODE
1
3
ANODE
2
LBAT54CLT1
3
1
2
SOT-23
ORDERING INFORMATION
Device
LBAT54CLT1
Package
SOT鈥?3
Shipping
3000/Tape & Reel
CATHODE
Preferred:
devices are recommended choices for future use and best overall value.
DEVICE MARKING
LBAT54CLT1 = KL3
MAXIMUM RATINGS
(T
J
= 125擄C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25擄C
Derate above 25擄C
Forward Current(DC)
Junction Temperature
Storage Temperature Range
I
F
T
J
T
stg
Symbol
V
R
P
F
Value
30
225
1.8
200Max
125Max
鈥?5 to +150
Unit
Volts
mW
mW/擄C
mA
擄C
擄C
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
碌A(chǔ))
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non鈥揜epetitive Peak Forward Current (t < 1.0 s)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
I
F
I
FRM
I
FSM
Min
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
7.6
0.5
0.22
0.41
0.52
鈥?/div>
0.29
0.35
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
10
2.0
0.24
0.5
0.8
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
碌A(chǔ)dc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
LBAT54CLT1鈥?/2
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