SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
A
F
G
1
KTX411T
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
E
B
5
DIM MILLIMETERS
_
A
2.9 + 0.2
B
C
D
E
F
G
H
I
J
K
L
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
2
3
4
G
EQUIVALENT CIRCUIT (TOP VIEW)
C
J
I
5
4
Marking
h
FE
Rank
5
4
L
J
H
Lot No.
1. D
1
2. Q
1
3. Q
1
4. Q
1
5. D
1
ANODE
EMITTER
BASE
COLLECTOR
CATHODE
D1
Q1
Type Name
C
1
2
3
1
2
3
TSV
MARK SPEC
KTX411T
Type
Q
1
h
FE
Rank : Y
Mark
CE
Q
1
h
FE
Rank : GR
CF
KTX411T
MAXIMUM RATINGS (Ta=25
TRANSISTOR Q
1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
0.8
)
RATING
30
20
5
1
-1
0.9
150
-55~150
UNIT
V
V
V
A
A
* Package mounted on a ceramic board (600
DIODE D
1
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-Repetitive Peak Surge current
Junction Temperature
Storage Temperature
SYMBOL
V
RRM
V
R
I
O
I
FSM
T
j
T
stg
RATING
25
20
1.0
3
125
-55~125
D
UNIT
V
V
A
2002. 8. 13
Revision No : 2
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