SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
KTX301E
EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
B
FEATURES
Including two(TR, Diode) devices in TESV.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
A1
A
C
B1
(Thin Extreme Super mini type with 5pin.)
1
5
DIM
A
A1
B
2
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
5
4
Type Name
5
4
H
3
4
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_
1.2+ 0.05
0.50
_
0.2 + 0.05
_ 0.05
0.5 +
_
0.12 + 0.05
5
C
P
P
D1
Q1
C
1
2
3
1
2
3
h
FE
Rank
1. D
1
2. Q
1
3. Q
1
4. Q
1
5. D
1
ANODE
EMITTER
BASE
COLLECTOR
CATHODE
MARK SPEC
Type
Mark
KTX301E
Q
1
h
FE
Rank : Y
CA
KTX301E
Q
1
h
FE
Rank : GR
CB
TESV
MAXIMUM RATINGS (Ta=25
TRANSISTOR Q
1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DIODE D
1
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-50
-50
-5
-150
-30
100
150
-55~150
UNIT
V
V
V
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
85
80
300
100
2
-
150
-55
150
J
D
UNIT
V
V
A
2002. 1. 24
Revision No : 1
1/2
1
2
