SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
Including two devices in TESV.
(Thin Extreme Super mini type with 5 pin)
Reduce a quantity of parts and manufacturing process.
A1
A
C
KTX201E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
B
B1
Simplify circuit design.
1
5
DIM
A
A1
B
2
3
4
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_
1.2+ 0.05
0.50
_
0.2 + 0.05
_ 0.05
0.5 +
_
0.12 + 0.05
5
C
P
P
EQUIVALENT CIRCUIT(TOP VIEW)
5
4
MARKING
5
4
H
Type Name
Q1
Q2
C
1
2
3
h
FE
Rank
1. Q
1
BASE
2. Q
1
, Q
2
EMITTER
3. Q
2
BASE
4. Q
2
COLLECTOR
5. Q
1
COLLECTOR
1
2
3
TESV
Q
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
RATING
-50
-50
-5
-150
-30
UNIT
V
V
V
Q
2
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
RATING
60
50
5
150
30
UNIT
V
V
V
Q
1
Q
2
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
)
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
-55
150
UNIT
2002. 1. 24
Revision No : 1
J
D
1/5
1
2
3
4
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