SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
KTX101E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
B
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 pin.)
Reduce a quantity of parts and manufacturing process.
A1
B1
Simplify circuit design.
A
C
1
6
C
2
5
3
4
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
P
P
DIM
A
A1
B
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_
1.2 + 0.05
0.50
_
0.2 + 0.05
_
0.5 + 0.05
_
0.12 + 0.05
5
MARKING
Type Name
6
5
4
h
FE
Rank
1.
2.
3.
4.
5.
6.
Q
1
Q
1
Q
2
Q
2
Q
2
Q
1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
H
Q1
Q2
B
1
2
3
1
2
3
TES6
Q
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
RATING
60
50
5
150
30
UNIT
V
V
V
Q
2
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
RATING
-50
-50
-5
-150
-30
UNIT
V
V
V
Q
1 ,
Q
2
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
)
SYMBOL
P
C
*
T
j
T
stg
RATING
200
150
-55
150
UNIT
2002. 1. 24
Revision No : 1
J
D
1/5
1
2
3
4
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