鈩?/div>
1. SOURCE
2. GATE
3. DRAIN
J
C
ESM
EQUIVALENT CIRCUIT
D
Marking
Type Name
G
KB
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25鈩?
CHARACTERISTIC
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
SYMBOL
I
GSS
V
(BR)DSS
I
DSS
V
th
|Y
fs
|
R
DS(ON)
C
iss
C
rss
C
oss
t
on
t
off
TEST CONDITION
V
GS
=鹵16V, V
DS
=0V
I
D
=100渭 V
GS
=0V
A,
V
DS
=30V, V
GS
=0V
V
DS
=3V, I
D
=0.1mA
V
DS
=3V, I
D
=10mA
I
D
=10mA, V
GS
=2.5V
V
DS
=3V, V
GS
=0V, f=1MHz
V
DS
=3V, V
GS
=0V, f=1MHz
V
DS
=3V, V
GS
=0V, f=1MHz
V
DD
=5V, I
D
=10mA, V
GS
=0錕?frac12;錕?V
MIN.
-
30
-
0.5
25
-
-
-
-
-
-
TYP.
-
-
-
-
-
4
8.5
3.3
9.3
50
180
MAX.
鹵1
-
1
1.5
-
7
-
-
-
-
-
UNIT
渭
A
V
渭
A
V
mS
鈩?/div>
pF
pF
pF
nS
nS
2002. 6. 17
Revision No : 0
1/3
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