SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
High pairing property in h
FE
.
The follwing characteristics are common for Q
1
, Q
2
.
3
KTC801E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
A1
Excellent temperature response between these 2 transistor.
A
C
1
6
5
2
4
P
P
DIM
A
A1
B
B1
C
D
H
J
P
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_ 0.05
1.6 +
_
1.2 + 0.05
0.50
_
0.2 + 0.05
_
0.5 + 0.05
_
0.12 + 0.05
5
C
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
RATING
60
50
5
150
30
200
150
-55 150
UNIT
V
V
V
mA
mA
mW
1. Q
1
2. Q
1
3. Q
2
4. Q
2
5. Q
2
6. Q
1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
H
MAXIMUM RATING (Ta=25
)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
J
D
Q2
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2
I
C
=100 , I
B
=10
V
CE
=10V, I
C
=1
V
CB
=10V, I
E
=0, f=1
V
CE
=6V, I
C
=0.1 , f=1
, Rg=10
MIN.
-
-
120
-
80
-
-
TYP.
-
-
-
0.1
-
2
1.0
Type Name
6
5
4
MAX.
0.1
0.1
400
0.30
-
3.5
10
UNIT.
V
Note : h
FE
Classification Y(4):120 240, GR(6):200 400
Marking
L
1
2
3
h
FE
Rank
2003. 2. 25
Revision No : 1
1/3
1
2
3
