SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
KTA711T
EPITAXIAL PLANAR PNP TRANSISTOR
E
FEATURES
Excellent h
FE
Linearity
: h
FE
(2)=25(Min.) at V
CE
=-6V, I
C
=-400mA.
G
A
F
K
1
B
K
6
Complementary to KTC811T.
2
5
DIM
A
B
C
D
E
D
F
G
H
I
3
4
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
C
J
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
0.8
)
RATING
-35
-30
-5
-500
500
0.9
150
-55
150
UNIT
V
V
V
mA
mA
W
K
L
J
J
H
I
L
1. Q
1
2. Q
1
3. Q
2
4. Q
2
5. Q
2
6. Q
1
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
TS6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
* Package mounted on a ceramic board (600
Q1
Q2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
h
FE
(2) Classification
0:70 140,
0:25Min.,
Y:120
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
h
FE
(2) (Note)
V
CE(sat)
V
BE
f
T
C
ob
240
Y:40Min.
TEST CONDITION
V
CB
=-35V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-6V, I
C
=-400mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-6V, I
C
=-20mA
V
CB
=-6V, I
E
=0, f=1MHz
-
-
70
25
-
-
-
-
1
2
3
MIN.
TYP.
-
-
-
-
-0.1
-0.8
200
13
MAX.
-0.1
-0.1
240
-
-0.25
-1.0
-
-
UNIT
A
A
V
V
MHz
pF
Marking
h
FE
Rank
Type Name
6
5
4
Lot No.
S
1
2
3
2001. 6. 27
Revision No : 0
1/2
1
2
