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KST63/64

KST63/64

Darlington Transistor

3

2

1

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25擄C unless otherwise noted

Symbol

V

CBO

V

CES

V

EBO

I

C

P

C

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Storage Temperature

Parameter

Value

-30

-30

-10

-500

350

150

Units

V

V

V

mA

mW

擄C

Electrical Characteristics

T

a

=25擄C unless otherwise noted

Symbol

BV

CES

I

CBO

I

EBO

h

FE

Parameter

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

: KST63

: KST64

: KST63

: K ST64

V

CE

(sat)

V

BE

(on)

f

T

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

V

CE

= -5V, I

C

= -10mA

V

CE

= -5V, I

C

= -100mA

I

C

= -100mA, I

B

= -0.1mA

V

CE

= -5V, I

C

= -100mA

V

CE

= -5V, I

C

= -10mA

f=100MHz

125

5K

10K

10K

20K

-1.5

-2.0

V

V

MHz

Test Condition

I

C

= -100, V

BE

=0

V

CE

= -30V, I

E

=0

V

EB

= -10V, I

C

=0

Min.

-30

Max.

-100

-100

Units

V

nA

nA

* Pulse test: PW鈮?00碌s, Duty Cycle鈮?%

Marking Code

Type

Mark

KST63

2U

KST64

2V

Marking

2U

漏2002 Fairchild Semiconductor Corporation

Rev. A2, November 2002

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