KSR2005
KSR2005
Switching Application
(Bias Resistor Built In)
鈥?Switching circuit, Inverter, Interface circuit, Driver Circuit
鈥?Built in bias Resistor (R
1
=4.7K鈩? R
2
=10K鈩?
鈥?Complement to KSR1005
1
TO-92
1. Emitter 2. Collector 3. Base
Equivalent Circuit
C
R1
B
R2
PNP Epitaxial Silicon Transistor
E
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-50
-50
-10
-100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
= -10碌A(chǔ), I
E
=0
I
C
= -100碌A(chǔ), I
B
=0
V
CB
= -40V, I
E
=0
V
CE
= -5V, I
C
= -5mA
I
C
= -10mA, I
B
= -0.5mA
V
CB
= -10V, I
E
=0
f=1.0MHz
V
CE
= -10V, I
C
= -5mA
V
CE
= -5V, I
C
= -100碌A(chǔ)
V
CE
= -0.3V, I
C
= -20mA
3.2
0.42
4.7
0.47
-0.3
-2.5
6.2
0.52
5.5
200
30
-0.3
V
pF
MHz
V
V
K鈩?/div>
Min.
-50
-50
-0.1
Typ.
Max.
Units
V
V
碌A(chǔ)
漏2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002
1
2
3
4
