KSP8598/8599
KSP8598/8599
Amplifier Transistor
鈥?Collector-Emitter Voltage: V
CEO
= KSP8598: 60V
KSP8599: 80V
鈥?Collector Power Dissipation: P
C
(max)=625mW
鈥?Suffix 鈥?C鈥?means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSP8598
: KSP8599
V
CEO
Collector-Emitter Voltage
: KSP8598
: KSP8599
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
1. Emitter 2. Base 3. Collector
Value
-60
-80
-60
-80
-5
-500
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KSP8598
: KSP8599
* Collector-Emitter Breakdown Voltage
: KSP8598
: KSP8599
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP8598
: KSP8599
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= -100碌A(chǔ), I
E
=0
Min.
-60
-80
I
C
= -10mA, I
B
=0
-60
-80
I
E
= -10碌A(chǔ), I
C
=0
V
CB
= -60V, I
E
=0
V
CB
= -80V, I
E
=0
V
CE
= -60V, I
B
=0
V
EB
= -4V, I
C
=0
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
I
C
= -100mA, I
B
= -5mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
f=100MHz
V
CB
= -5V, I
E
=0
f=1MHz
-0.5
-0.6
150
8
100
100
75
-5
-100
-100
-100
-100
300
V
V
V
nA
nA
nA
nA
Max.
Units
V
V
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
: KSP8598
: KSP8599
Current Gain Bandwidth Product
Output Capacitance
-0.4
-0.3
-0.7
-0.8
V
V
V
V
MHz
pF
f
T
C
ob
* Pulse Test: Pulse Width鈮?00碌s, Duty Cycle鈮?%
漏2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
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