KSP8098/8099
KSP8098/8099
Amplifier Transistor
鈥?Collector-Emitter Voltage: V
CEO
= KSP8098: 60V
KSP8099: 80V
鈥?Collector Power Dissipation: P
C
(max)=625mW
鈥?Suffix 鈥?C鈥?means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSP8098
: KSP8099
V
CEO
Collector-Emitter Voltage
: KSP8098
: KSP8099
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
60
80
6
500
625
150
-55 ~ 150
V
V
V
mA
mW
擄C
擄C
60
80
V
V
Parameter
Value
Units
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KSP8098
: KSP8099
* Collector-Emitter Breakdown Voltage
: KSP8098
: KSP8099
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP8098
: KSP8099
I
CEO
I
EBO
h
FE
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CE
=60V, I
B
=0
V
EB
=6V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=10mA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=10mA
f=100MHz
V
CB
=5V, I
E
=0
f=1MHz
0.5
0.6
150
6
100
100
75
100
100
100
100
300
nA
nA
nA
nA
Test Condition
I
C
=100碌A(chǔ), I
E
=0
Min.
60
80
I
C
=10mA, I
B
=0
60
80
I
E
=10碌A(chǔ), I
C
=0
6
V
V
V
Max.
Units
V
V
BV
CEO
BV
EBO
I
CBO
V
CE
(sat)
V
BE
(on)
Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
: KSP8098
: KSP8099
0.4
0.3
0.7
0.8
V
V
V
V
MHz
pF
f
T
C
ob
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: Pulse Width鈮?00碌s, Duty Cycle鈮?%
漏2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
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