KSH32/32C
KSH32/32C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
鈥?Lead Formed for Surface Mount Application (No Suffix)
鈥?Straight Lead (I-PAK, 鈥? I鈥?Suffix)
鈥?Electrically Similar to Popular TIP32 and TIP32C
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Parameter
: KSH32
: KSH32C
: KSH32
: KSH32C
Value
- 40
- 100
- 40
- 100
-5
-3
-5
-1
15
1.56
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: KSH32
: KSH32C
Collector Cut-off Current
: KSH32
: KSH32C
I
CES
Collector Cut-off Current
: KSH32
: KSH32C
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
= - 40V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
I
C
= - 3, I
B
= - 375mA
V
CE
= - 4A, I
C
= - 3A
V
CE
= -10V, I
C
= - 500mA
3
25
10
-20
-20
-1
50
-1.2
-1.8
V
V
MHz
碌A
碌A
mA
V
CE
= - 40V, I
B
= 0
V
CE
= - 60V, I
B
= 0
-50
-50
碌A
碌A
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
-40
-100
Max.
Units
V
V
I
CEO
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
1
2
3
4
5
6
