KSH31/31C
KSH31/31C
General Purpose Amplifier
Low Speed Switching Applications
鈥?Lead Formed for Surface Mount Application (No Suffix)
鈥?Straight Lead (I-PAK, 鈥? I鈥?Suffix)
鈥?Electrically Similar to Popular TIP31 and TIP31C
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSH31
: KSH31C
V
CEO
Collector-Emitter Voltage
: KSH31
: KSH31C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
T
J
T
STG
Junction Temperature
Storage Temperature
40
100
40
100
5
3
5
1
15
1.56
150
- 65 ~ 150
V
V
V
V
V
A
A
A
W
W
擄C
擄C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: KSH31
: KSH31C
Collector Cut-off Current
: KSH31
: KSH31C
I
CES
Collector Cut-off Current
: KSH31
: KSH31C
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
= 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 375mA
V
CE
= 4A, I
C
= 3A
V
CE
= 10V, I
C
= 500mA
3
25
10
20
20
1
50
1.2
1.8
V
V
MHz
碌A(chǔ)
碌A(chǔ)
mA
V
CE
= 40V, I
B
= 0
V
CE
= 60V, I
B
= 0
50
50
碌A(chǔ)
碌A(chǔ)
Test Condition
I
C
= 30mA, I
B
= 0
Min.
40
100
Max.
Units
V
V
I
CEO
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. B3, October 2002