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KSH127 Datasheet

  • KSH127

  • D-PAK for Surface Mount Applications

  • 6頁

  • FAIRCHILD

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KSH127
KSH127
D-PAK for Surface Mount Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, 鈥?- I 鈥?Suffix)
Electrically Similar to Popular TIP127
Complement to KSH122
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Value
- 100
- 100
-5
-8
- 16
- 120
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
mA
W
W
擄C
擄C
R1
R2
E
B
Equivalent Circuit
C
R
1
鈮?/div>
8
k
鈩?/div>
R
2
鈮?/div>
0.12
k
鈩?/div>
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
Parameter
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
*Base-Emitter On Voltage
Output Capacitance
Test Condition
I
C
= - 30mA, I
B
= 0
V
CE
= - 50V, I
B
= 0
V
CB
= - 100V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 4V, V
EB
= -8A
I
C
= - 4A, I
B
= - 16mA
I
C
= - 8A, I
B
= - 80mA
I
C
= - 8A, I
B
= - 80mA
V
CE
= -4V, I
C
= - 4A
V
CB
= - 10V, I
E
= 0
f= 0.1MHz
1000
100
Min.
- 100
Max.
- 10
- 10
-2
12K
-2
-4
- 4.5
- 2.8
300
V
V
V
V
pF
Units
V
碌A
碌A
mA
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002

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