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KSH112-I Datasheet

  • KSH112-I

  • D-PAK for Surface Mount Applications

  • 59.04KB

  • 6頁

  • FAIRCHILD

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KSH112
KSH112
D-PAK for Surface Mount Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, 鈥?- I 鈥?Suffix)
Electrically Similar to Popular TIP112
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Value
100
100
5
2
4
50
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
mA
W
W
擄C
擄C
R1
R2
E
B
Equivalent Circuit
C
R
1
鈮?/div>
10
k
鈩?/div>
R
2
鈮?/div>
0.6
k
鈩?/div>
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
CBO
I
EBO
h
FE
Parameter
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 50V, I
B
= 0
V
CB
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
I
C
= 2A, I
B
= 8mA
I
C
= 4A, I
B
= 40mA
I
C
= 4A, I
B
= 40mA
V
CE
= 3A, I
C
= 2A
V
CE
= 10V, I
C
= 0.75A
V
CB
= 10V, I
E
= 0
f = 0.1MHz
25
100
500
1000
200
Min.
100
Max.
20
20
2
12K
2
3
4
2.8
V
V
V
V
MHz
pF
Units
V
碌A(chǔ)
碌A(chǔ)
mA
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002

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