KSE800/801/802/803
KSE800/801/802/803
Monolithic Construction With Built-in Base-
Emitter Resistors
鈥?High DC Current Gain : h
FE
= 750 (Min.) @ IC= 1.5 and 2.0A DC
鈥?Complement to KSE700/701/702/703
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
: KSE800/801
: KSE802/803
: KSE800/801
: KSE802/803
Value
60
80
60
80
5
4
0.1
40
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
擄C
擄C
R1
R2
E
B
Equivalent Circuit
C
R
1
鈮?/div>
10
k
鈩?/div>
R
2
鈮?/div>
0.6
k
鈩?/div>
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: KSE800/801
: KSE802/803
Collector Cut-off Current
: KSE800/801
: KSE802/803
Collector Cut-off Current
Test Condition
I
C
= 50mA, I
B
= 0
Min.
60
80
100
100
100
500
2
750
750
100
2.5
2.8
3
2.5
2.5
3
V
V
V
V
V
V
Max.
Units
V
V
碌A
碌A
碌A
碌A
mA
I
CEO
V
CE
= 60V, I
B
= 0
V
CE
= 80V, I
B
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
T
C
= 100擄C
V
BE
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
I
C
= 1.5A, I
B
= 30mA
I
C
= 2A, I
B
= 40mA
I
C
= 4A, I
B
= 40mA
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
I
CBO
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
: KSE800/802
: KSE801/803
: ALL DEVICES
V
CE
(sat)
Collector-Emitter Saturation Voltage
: KSE800/802
: KSE801/803
: ALL DEVICES
Base-Emitter ON Voltage
: KSE800/802
: KSE801/803
: ALL DEVICES
V
BE
(on)
漏2001 Fairchild Semiconductor Corporation
Rev. A3, June 2001
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