KSE45H Series
KSE45H Series
General Purpose Power Switching Applications
鈥?Low Collector-Emitter Saturation Voltage: V
CE
(sat) = -1V (MAX)@-8A
鈥?Fast Switching Speeds
鈥?Complement to KSE44H
TO-220
2.Collector
3.Emitter
1
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
Parameter
Collector-Emitter Voltage
: KSE45H 1,2
: KSE45H 4,5
: KSE45H 7,8
: KSE45H 10,11
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Value
- 30
- 45
- 60
- 80
-5
- 10
- 20
50
1.67
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
W
擄C
擄C
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CES
I
EBO
h
FE
Parameter
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
*Collector-Emitter Saturation Voltage
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Test Condition
V
CE
= Rated, V
CEO
, V
EB
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 1V, I
C
= - 2A
35
60
-1
-1
-1.5
40
230
135
500
100
V
V
V
MHz
pF
ns
ns
ns
Min.
Typ.
Max.
-10
-100
Units
碌A(chǔ)
碌A(chǔ)
V
CE
(sat)
I
C
= - 8A, I
B
= - 0.8A
I
C
= - 8A, I
B
= - 0.4A
I
C
= - 8A, I
B
= - 0.8A
V
CE
= - 10V, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
V
CC
=20V, I
C
= - 5A
I
B1
= - I
B2
= - 0.5A
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
* Pulse test: PW鈮?00碌s, Duty cycle鈮?%
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001