KSE340
KSE340
High Voltage General Purpose Applications
鈥?High Collector-Emitter Breakdown Voltage
鈥?Suitable for Transformer
鈥?Complement to KSE350
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
300
300
5
500
20
150
- 65 ~ 150
Units
V
V
V
mA
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= 1mA, I
B
= 0
V
CB
= 300V, I
E
=0
V
BE
= 3V, I
C
= 0
V
CE
= 10V, I
C
= 50mA
30
Min.
300
Max.
100
100
240
Units
V
碌A(chǔ)
碌A(chǔ)
漏2000 Fairchild Semiconductor International
Rev. A1, December 2000