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KSE3055T

KSE3055T

General Purpose and Switching Applications

鈥?DC Current Gain Specified to I

C

=10A

鈥?High Current Gain-Bandwidth Product : f

T

= 2MHz (Min.)

1

TO-220

2.Collector

3.Emitter

1.Base

NPN Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

T

J

T

STG

Collector -Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Dissipation (T

C

=25擄C)

Collector Dissipation (T

a

=25擄C)

Junction Temperature

Storage Temperature

Parameter

Value

70

60

5

10

6

75

0.6

150

- 55 ~ 150

Units

V

V

V

A

A

W

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

BV

CEO

I

CEO

I

CEX1

I

CEX2

I

EBO

h

FE

V

CE

(sat)

V

BE

(on)

f

T

Parameter

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Collector Cut-off Current

Test Condition

I

C

= 200mA, I

B

= 0

V

CE

= 30V, I

B

= 0

V

CE

= 70V, V

BE

(off) = -1.5V

V

CE

= 70V, V

BE

(off) = -1.5V

@ T

C

= 150擄C

V

EB

= 5V, I

C

= 0

V

CE

= 4V, I

C

= 4A

V

CE

= 4V, I

C

= 10A

I

C

= 4A, I

B

= 0.4A

I

C

= 10A, I

B

= 3.3A

V

CE

= 4V, I

C

= 4A

V

CE

= 10V, I

C

= 500mA

2

20

5

Min.

60

Max.

700

1

5

5

100

1.1

8

1.8

V

V

V

MHz

Units

V

碌A(chǔ)

mA

mA

mA

Emitter Cut-off Current

*DC Current Gain

*Collector-Emitter Saturation Voltage

*Base-Emitter On Voltage

Current Gain Bandwidth Product

* Pulse test: PW鈮?00碌s, duty cycle鈮?% Pulse

漏2000 Fairchild Semiconductor International

Rev. A1, December 2000

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