KSE13005F
KSE13005F
High Voltage Switch Mode Application
鈥?High Speed Switching
鈥?Suitable for Switching Regulator and Motor Control
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
700
400
9
4
8
2
30
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Base Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
Test Condition
I
C
= 10mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 2A
I
C
= 1A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.5A
I
C
= 4A, I
B
= 1A
I
C
= 1A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.5A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
=125V, I
C
= 2A
I
B1
= - I
B2
= 0.4A
R
L
= 125鈩?/div>
4
0.8
4
0.9
65
10
8
Min.
400
Typ.
Max.
1
60
40
0.5
0.6
1
1.2
1.6
V
V
V
V
V
pF
MHz
碌s
碌s
碌s
Units
V
mA
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
* Pulse test: PW鈮?00碌s, Duty Cycle鈮?%
漏2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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