KSE13003
KSE13003
High Voltage Switch Mode Applications
鈥?High Speed Switching
鈥?Suitable for Switching Regulator and Motor Control
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
700
400
9
1.5
3
0.75
20
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector Emitter Saturation Voltage
Test Condition
I
C
= 5mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
=1A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
I
C
= 1.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.1A
V
CC
=125V, I
C
= 1A
I
B1
= 0.2A, I
B2
= - 0.2A
R
L
= 125鈩?/div>
4
1.1
4.0
0.7
21
8
5
Min.
400
Typ.
Max.
10
40
0.5
1
3
1
1.2
V
V
V
V
V
pF
MHz
碌s
碌s
碌s
Units
V
碌A(chǔ)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
* Pulse Test: Pulse Width=5ms, Duty Cycle鈮?0%
漏2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
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