KSD985/986
KSD985/986
Low Frequency Power Amplifier
鈥?Low Speed Switching Industrial Use
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
Parameter
Collector-Base Voltage
Collector-Emitter Volage
: KSD985
: KSD986
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
60
80
8.0
1.5
3.0
0.15
1.0
10
150
- 55 ~ 150
V
V
V
A
A
A
W
W
擄C
擄C
Value
150
Units
V
* PW鈮?00碌s, Duty Cycle10%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Test Condition
V
CB
= 60V, I
E
= 0
V
CE
= 60V, R
BE
= 51鈩?/div>
@ T
C
= 125擄C
V
CE
= 60V, V
BE
(off) = -1.5A
V
CE
= 60V, V
BE
(off) = -1.5A
@ T
C
= 125擄C
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 1A
I
C
= 1A, I
B
= 1mA
I
C
= 1A, I
B
= 1mA
V
CC
= 50V, I
C
= 1A
I
B1
= - I
B2
= 1mA
R
L
= 50鈩?/div>
0.5
1.0
1.0
1000
2000
Min.
Typ.
Max.
10
1.0
10
1.0
1.0
30000
1.5
2.0
V
V
碌s
碌s
碌s
Units
碌A
mA
碌A
mA
mA
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
* Pulse Test: PW鈮?50碌s, Duty Cycle鈮?%
h
FE
Classification
Classification
h
FE2
R
2000 ~ 5000
O
4000 ~ 10000
Y
8000 ~ 30000
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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