KSD882
KSD882
Audio Frequency Power Amplifier
Low Speed Switching
鈥?Complement to KSB772
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector- Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
40
30
5
3
7
0.6
10
1
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
擄C
* PW鈮?0ms, Duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= 30V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 2V, I
C
= 20mA
V
CE
= 2V, I
C
= 1A
I
C
= 2A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.2A
V
CE
= 5V, I
E
= 0.1A
V
CB
= 10V, I
E
= 0
f = 1MHz
30
60
150
160
0.3
1.0
90
45
Min.
Typ.
Max.
1
1
400
0.5
2.0
V
V
MHz
pF
Units
碌A(chǔ)
碌A(chǔ)
* Pulse Test: PW鈮?50碌s, Duty Cycle鈮?% Pulsed
h
FE
Classificntion
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
G
200 ~ 400
漏2000 Fairchild Semiconductor International
Rev. A, February 2000