KSD5041
KSD5041
AF Output Amplifier for Electronic Flash Unit
鈥?Low Collector-Emitter Saturation Voltage
鈥?High Performance at Low Supply Voltage
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
40
20
7
5
0.75
150
-55 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=1mA, I
B
=0
I
C
=10碌A(chǔ), I
C
=0
V
CB
=10V, I
E
=0
V
EB
=7V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
I
C
=3A, I
B
=0.1A
V
CE
=6V, I
C
=50mA
V
CB
=20V, I
E
=0, f=1MHz
150
50
180
150
Min.
20
7
0.1
0.1
600
1
V
MHz
pF
Typ.
Max.
Units
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE
P
180 ~ 270
Q
230 ~ 380
R
340 ~ 600
漏2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002