KSD363
KSD363
B/W TV Horizontal Deflection Output
鈥?Collector-Base Voltage : V
CBO
=300V
鈥?Collector Current : I
C
=6A
鈥?Collector Dissipation : P
C
=40W(T
C
=25擄C)
TO-220
2.Collector
3.Emitter
1
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
300
120
8
6
40
150
- 55 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Test Condition
I
C
=1mA, I
E
= 0
I
C
= 20mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 250V, I
E
= 0
V
CE
= 5V, I
C
= 1A
I
C
= 1A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.1A
V
CE
= 5V, I
C
= 0.5A
10
40
Min.
300
120
8
1
240
1
1.5
V
V
MHz
Typ.
Max.
Units
V
V
V
mA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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