KSD1691
KSD1691
Feature
鈥?Low Collector-Emtter Saturation Voltage & Large Collector Current
鈥?High Power Dissipation: P
C
= 1.3W (T
a
=25擄C)
鈥?Complementary to KSB1151
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
60
60
7
5
8
1
1.3
20
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
擄C
* PW鈮?0ms, duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
Test Condition
V
CB
= 50V, I
E
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 1V, I
C
= 0.1A
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 5A
I
C
= 2A, I
B
= 0.2A
I
C
= 2A, I
B
= 0.2A
V
CC
= 10V, I
C
= 2A
I
B1
= - I
B2
= 0.2A
R
L
= 5鈩?/div>
60
100
50
0.1
0.9
0.2
1.1
0.2
Min.
Typ.
Max.
10
10
400
0.3
1.2
1
2.5
1
V
V
碌s
碌s
碌s
Units
碌A(chǔ)
碌A(chǔ)
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
* Pulse test: PW鈮?0碌s, duty Cycle鈮?% Pulsed
h
FE
Classificntion
Classification
h
FE 2
O
100 ~ 200
Y
160 ~ 320
G
200 ~ 400
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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