鈥?/div>
Low Collector-Emitter Saturation Voltage
Large Current Capacity and Wide SOA
Fast Switching Speed
Complement to KSB1121
1
SOT-89
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
*
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
1. Base 2. Collector 3. Emitter
Ratings
30
25
6
2
500
1.3
150
-55 ~ 150
Units
V
V
V
A
mW
W
擄C
擄C
* Mounted on Ceramic Board (250mm
2
x0.8mm)
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth product
Output Capacitance
* Turn On Time
* Storage Time
* Fall Time
Test Condition
I
C
=10碌A(chǔ), I
E
=0
I
C
=1mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=20V, I
E
=0
V
BE
=4V, I
C
=0
V
CE
=2V, I
C
=0.1A
V
CE
=2V, I
C
=1.5A
I
C
=1.5A, I
B
=75mA
I
C
=1.5A, I
B
=75mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=12V, V
BE
=5V
I
B1
= -I
B2
=25mA
I
C
=0.5A, R
L
=25鈩?/div>
100
65
0.18
0.85
150
19
60
500
25
Min.
30
25
6
100
100
560
0.4
1.2
V
V
MHz
pF
ns
ns
ns
Typ.
Max.
Units
V
V
V
nA
nA
* Pulse Width=20碌s, Duty Cycle鈮?%
h
FE
Classification
Classification
h
FE
R
100 ~ 200
Marking
S
140 ~ 280
T
200 ~ 400
U
280 ~ 560
SYX
h
FE
grade
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1
2
3
4
5
