KSD1616/1616A
KSD1616/1616A
Audio Frequency Power Amplifier & Medium
Speed Switching
鈥?Complement to KSB1116/1116A
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
: KSD1616
: KSD1616A
: KSD1616
: KSD1616A
Ratings
60
120
50
60
6
1
2
0.75
150
-55 ~ 150
Units
V
V
V
V
V
A
A
W
擄C
擄C
* PW鈮?0ms, Duty Cycle < 50%
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
* Base-Emitter On Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KSD1616
: KSD1616A
Test Condition
V
CB
=60V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=1A
V
CE
=2V, I
C
=50mA
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=10V, I
E
=0, f=1MHz
V
CE
=2V, I
C
=100mA
V
CC
=10V, I
C
=100mA
I
B1
= -I
B2
=10mA
V
BE
(off) = -2~-3V
100
135
135
81
600
640
0.15
0.9
19
160
0.07
0.95
0.07
Min.
Typ.
Max.
100
100
600
400
700
0.3
1.2
mV
V
V
pF
MHz
碌s
碌s
碌s
Units
nA
nA
* Pulse Test: PW<350碌s, Duty Cycle鈮?% Pulsed
h
FE1
Classification
Classification
h
FE1
Y
135 ~ 270
G
200 ~ 400
L
300 ~ 600
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002