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KSC815OBU Datasheet

  • KSC815OBU

  • Low Frequency Amplifier & High Frequency Oscillator

  • 4頁

  • FAIRCHILD

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KSC815
KSC815
Low Frequency Amplifier & High Frequency
Oscillator
鈥?Collector-Base Voltage : V
CBO
=60V
鈥?Complement to KSA539
鈥?Suffix 鈥?C鈥?means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
60
45
5
200
400
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
BE
(on)
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=100碌A(chǔ), I
E
=0
I
C
=10mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=45V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=50mA
V
CE
=10V, I
C
=10mA
I
C
=150mA, I
B
=15mA
I
C
=150mA, I
B
=15mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
100
40
0.6
0.65
0.15
0.83
200
4
Min.
60
45
5
0.1
0.1
400
0.9
0.4
1.1
V
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002

KSC815OBU 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 200mA

  • 45V

  • 400mV @ 15mA，150mA

  • -

  • 70 @ 50mA，1V

  • 400mW

  • 200MHz

  • 通孔

  • TO-226-3、TO-92-3 標(biāo)準(zhǔn)主體

  • TO-92-3

  • 散裝

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