鈥?/div>
High Breakdown Voltage : BV
CBO
=1500V
High Speed Switching : t
F
=0.1碌s (Typ.)
Wide S.O.A
For C-Monitor(69KHz)
TO-3PF
2.Collector
3.Emitter
1
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
1500
800
6
10
30
60
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C
unless otherwise noted
Symbol
I
CES
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
F
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Fall Time
Test Condition
V
CE
= 1400V, V
BE
=0
V
CB
= 800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 6A
I
C
= 6A, I
B
= 1.5A
I
C
= 6A, I
B
= 1.5A
V
CC
= 200V, I
C
= 6A
I
B1
= 1.2A, I
B2
= - 2.4A
R
L
= 33.3鈩?/div>
0.1
15
7
Min.
Typ.
Max.
1
10
1
48
10
3
1.5
0.3
V
V
碌s
Units
mA
uA
mA
漏2000 Fairchild Semiconductor International
Rev. B. February 2000
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