鈥?/div>
Wide Safe Operating Area
Built-in Free Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
B
Equivalent Circuit
C
1
E
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
1600
800
12
3
6
2
4
100
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
擄C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃jc
R
胃ja
T
L
Thermal Resistance
Characteristics
Junction to Case
Junction to Ambient
Maximun Lead Temperature for Soldering Purpose
: 1/8鈥?from Case for 5 seconds
Rating
1.25
62.5
270
擄C
Unit
擄C/W
漏2003 Fairchild Semiconductor Corporation
Rev. C1, June 2003