鈥?/div>
Wide Safe Operating Area
Built-in Free Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Two Package Choices; D-PAK or TO-220
B
D-PAK
Equivalent Circuit
C
1
TO-220
E
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
C
=25擄C) : D-PAK *
: TO-220
Junction Temperature
Storage Temperature
Value
1000
450
12
2
5
1
2
30
50
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
擄C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃jc
R
胃ja
T
L
Thermal Resistance
Characteristics
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purpose
; 1/8鈥?from Case for 5 Seconds
Rating
TO-220
2.5
62.5
270
D-PAK
4.17 *
50
270
擄C
Unit
擄C/W
* Mounted on 1鈥?square PCB (FR4 ro G-10 Material)
漏2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002