鈥?/div>
Wide Safe Operating Area
Built-in Free-Wheeling Diode
Suitable for Electronic Ballast Application
Small Variance in Storage Time
Two Package Choices : TO-220 or D2-PAK
B
Equivalent Circuit
C
1
TO-220
E
1
1.Base
2.Collector
3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
1000
450
12
5
10
2
4
75
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
擄C
* Pulse Test : Pulse Width = 5ms, Duty Cycle
鈮?/div>
10%
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃jc
R
胃ja
T
L
Thermal Resistance
Characteristics
Junction to Case
Junction to Ambient
Maximun Lead Temperature for Soldering
Rating
1.65
62.5
270
擄C
Unit
擄C/W
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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