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KSC5305D Datasheet

  • KSC5305D

  • High Voltage High Speed Power Switch Application

  • 6頁

  • FAIRCHILD

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KSC5305D
KSC5305D
High Voltage High Speed Power Switch
Application
鈥?Built-in Free-wheeling Diode makes efficient anti saturation operation
鈥?Suitable for half bridge light ballast Applications
鈥?No need to interest an hFE value because of low variable storage-time
spread even though corner spirit product
鈥?Low base drive requirement
B
Equivalent Circuit
C
1
E
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
800
400
12
5
10
2
4
75
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
擄C
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃jc
R
胃ja
Thermal Resistance
Characteristics
Junction to Case
Junction to Ambient
Rating
1.65
62.5
Unit
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

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