鈥?/div>
High Current Capability : I
C
=15A
High Collector Breakdown Voltage : V
CEO
=230V (Min.)
High Power Dissipation
Wide S.O.A
Complement to KSA1962
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
230
230
5
10
1.5
100
150
- 50 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C
unless
otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
* Pulse Test : PW=20us
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=5mA, I
E
=0
I
C
=10mA, R
BE
=鈭?/div>
I
E
=5mA, I
C
=0
V
CB
=230V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=7A
I
C
=8A, I
B
=0.8A
V
CE
=5V, I
C
=7A
V
CE
=5V, I
C
=1A
V
CB
=10V, f=1MHz
Min.
230
230
5
Typ.
Max.
Units
V
V
V
5.0
5.0
55
35
60
0.4
1.0
30
200
3.0
1.5
160
uA
uA
V
V
MHz
pF
h
FE
Classification
Classification
h
FE1
R
55 ~ 110
O
80 ~ 160
漏2000 Fairchild Semiconductor International
Rev. B, Noverber 2000
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