KSC5054
KSC5054
High Speed High Voltage Switching
Industrial Use
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
1
I-PAK
1. Base 2. Collector 3. Emitter
Value
500
400
7
0.25
0.5
1
1
10
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
擄C
* PW鈮?00碌s, Duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
V
CEX
(sus)1
V
CEX
(sus)2
I
CBO
I
CER
I
EBO
I
CEX1
I
CEX2
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
Test Condition
I
C
= 0.3A, I
B1
= 0.06A, L = 10mH
I
C
= 0.3A, I
B1
= -I
B2
= 0.06A
V
BE
(off) = -5V, L = 10mH
I
C
= 0.6A, I
B1
= 0.2, L = 10mH
I
B
2 = -0.06, V
BE
(off) = -5V
V
CB
= 400V, I
E
= 0
V
CE
= 400V, R
BE
= 51鈩? T
C
= 125擄C
V
EB
= 5V, I
C
= 0
V
CE
= 400V, V
BE
(off) = -1.5V
V
CE
= 400V, V
BE
(off) = -1.5V @
T
C
= 125擄C
V
CE
= 5V, I
C
= 0.05A
V
CE
= 5V, I
C
= 0.3A
I
C
= 0.3A, I
B
= 0.06A
I
C
= 0.3A, I
B
= 0.06A
V
CC
= 150V, I
C
= 0.3A
I
B1
= -I
B2
= 0.06A, R
L
= 500鈩?/div>
PW = 50碌s, Duty Cycle鈮?%
20
10
Min.
400
450
400
10
1
10
10
1
80
1
1.2
1
2.5
1
V
V
碌s
碌s
碌s
Max.
Units
V
V
V
碌A(chǔ)
mA
碌A(chǔ)
碌A(chǔ)
mA
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
* Pulse Test: PW鈮?50碌s, Duty Cycle鈮?% Pulsed
h
FE
Classification
Classification
h
FE1
漏2001 Fairchild Semiconductor Corporation
R
20 ~ 40
O
30 ~ 60
Y
40 ~ 80
Rev. A1, June 2001
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2
3
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