KSC5030
KSC5030
High Voltage and High Reliabilty
鈥?High Speed Switching
鈥?Wide SOA
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
1100
800
7
6
20
3
100
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
I
C
= 3A, I
B1
= -I
B2
= 0.6A
L = 1mH, Clamped
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.4A
V
CE
= 5V, I
C
= 2A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 0.4A
V
CC
= 400V
I
C
= 51
B1
= -2.5I
B2
= 4A
R
L
= 100鈩?/div>
120
15
0.5
3
0.3
10
8
Min.
1100
800
7
800
10
10
40
2
1.5
V
V
pF
MHz
碌s
碌s
碌s
Typ.
Max.
Units
V
V
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classificntion
Classification
h
FE1
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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