KSC5019
KSC5019
Low Saturation
鈥?V
CE
(sat)=0.5V at I
C
=2A, I
B
=50mA
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
30
10
6
2
5
2
750
150
-55 ~ 150
Units
V
V
V
V
A
A
A
mW
擄C
擄C
* PW鈮?0ms, Duty Cycle鈮?0%
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
BV
CEO
BV
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
=30V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CE
=1V, I
C
=0.5A
V
CE
=1V, I
C
=2A
I
C
=2A, I
B
=50mA
V
CE
=1V, I
C
=2A
V
CE
=1V, I
C
=0.5A
V
CB
=10V, I
E
=0, f=1MHz
10
6
140
70
600
200
0.2
0.86
150
27
0.5
1.5
V
V
MHz
pF
Min.
Typ.
Max.
100
100
Units
nA
nA
V
V
h
FE
Classification
Classification
h
FE
L
140 ~ 240
M
200 ~ 330
N
300 ~ 450
P
420 ~ 600
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002