鈥?/div>
High Current Capability : I
C
=6A
High Power Dissipation
Wide S.O.A
Complement to KSA3010
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
120
120
5
6
12
60
150
- 50 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
BV
CEO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= 120V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 5A,, I
B
= 0
V
CE
= 5V, I
C
= 1A,
I
C
= 5A, I
B
= 0.5A
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
= 1A
V
CB
=10V, I
E
=0, f=1MHz
Min.
-
-
120
55
-
-
-
-
Typ.
-
-
-
-
-
-
30
90
Max.
10
10
-
160
2.5
1.5
-
-
V
V
MHz
pF
Units
碌A(chǔ)
碌A(chǔ)
V
h
FE
Classification
Classification
h
FE
R
55 ~ 110
O
80 ~ 160
漏2001 Fairchild Semiconductor Corporation
Rev. B2, Septmeber 2001