KSC3953
KSC3953
CRT Display Video Output
鈥?High Current Gain Bandwidth Product : f
T
=400MHz(Typ.)
鈥?High Collector-Emitter Voltage : V
CEO
=120V
鈥?Low Reverse Transfer Capacitance : C
re
=1.7pF(Typ.)
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
120
120
3
200
400
1.3
8
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
EBO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
C
re
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Test Condition
I
C
= 10碌A, I
B
= 0
I
C
= 1mA, R
BE
=
鈭?/div>
I
E
= 100碌A, I
C
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 100mA
I
C
= 30mA, I
B
= 3mA
I
C
= 30mA, I
B
= 3mA
V
CE
= 10V,I
C
= 50mA
V
CB
= 30V, f = 1MHz
V
CB
= 30V, f = 1MHz
400
2.1
1.7
40
20
Min.
120
120
3
0.1
1.0
120
1.0
1.0
V
V
MHz
pF
pF
Typ.
Max.
Units
V
V
V
碌A
碌A
h
FE
Classificntion
Classification
h
FE1
C
40 ~ 80
D
60 ~ 120
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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