KSC388
KSC388
TV Final Picture IF Amplifier Applications
鈥?G
PE
= 33dB (TYP) at f=45MHz
鈥?Suffix 鈥?C鈥?means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
25
4
50
300
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
ob
C
c路rbb麓
f
T
G
PE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Collector-Base Time Constant
Current Gain Bandwidth Product
Power Gain
Test Condition
I
C
=10碌A, I
E
=0
I
C
=5mA, I
B
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=12.5V, I
C
=12.5mA
I
C
=15mA, I
B
=1.5mA
I
C
=15mA, I
B
=1.5mA
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
C
=1mA
f=30MHz
V
CE
=12.5V, I
C
=12.5mA
V
CC
=12.5V, I
C
=12.5mA
f=45MHz
300
28
33
36
0.8
20
Min.
30
25
0.1
0.1
200
0.2
1.5
2
25
V
V
pF
ps
MHz
dB
Typ.
Max.
Units
V
V
碌A
碌A
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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