KSC3265
KSC3265
Low Frequency Amplifier
鈥?Complement to KSA1298
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
25
5
800
160
200
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
擄C
擄C
鈭?/div>
Refer to KSD261 for graphs
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=6V, I
C
=800mA
I
C
=500mA, I
B
=20mA
V
CE
=1V, I
C
=10mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
0.5
120
13
100
40
Min.
25
5
100
100
320
0.4
0.8
V
V
MHz
pF
Typ.
Max.
Units
V
V
nA
nA
C
ob
h
FE
Classification
Classification
h
FE
O
100 ~ 200
Marking
Y
160 ~ 320
K1O
h
FE
grade
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1
2
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