KSC3074
KSC3074
High Power Switching
鈥?Complement to KSA1244
1
I-PACK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
60
50
5
5
1
1
20
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 10mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 1A
V
CE
= 1V, I
C
= 3A
I
C
= 3A, I
B
= 0.15A
I
C
= 3A, I
B
= 0.15A
V
CE
= 4V, I
C
= 1A
V
CB
= 10V, f = 1MHz
V
CC
= 30V, I
C
= 3A
I
B1
= - I
B2
=0.15A
R
L
= 10鈩?/div>
0.9
120
80
0.1
1
0.1
70
30
Min.
50
Typ.
Max.
1
1
240
0.5
1.2
V
V
MHz
pF
碌s
碌s
碌s
Units
V
碌A
碌A
h
FE
Classification
Classification
h
FE1
O
70 ~ 140
Y
120 ~ 240
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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2
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