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KSC3073 Datasheet

  • KSC3073

  • Power Amplifier Application

  • 4頁(yè)

  • FAIRCHILD

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KSC3073
KSC3073
Power Amplifier Application
鈥?Complement to KSA1243
1
I-PAK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
30
30
5
3
0.6
1
15
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= 10mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 2.5A
I
C
= 2A, I
B
= 0.2A
V
CE
= 2V,I
C
= 0.5A
V
CE
= 2V, I
C
= 0.5A
V
CB
= 10V, f =1MHz
70
25
0.3
0.75
100
35
Min.
30
5
1
1
240
0.8
1
V
V
MHz
pF
Typ.
Max.
Units
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE1
O
70 ~ 140
Y
120 ~ 240
漏2002 Fairchild Semiconductor Corporation
Rev. B, September 2002

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